Product Summary

The SI4933DY-T1-E3 is a 12V(D-S) dual P-channel MOSFET.

Parametrics

SI4933DY-T1-E3 absolute maximum ratings: (1)Drain-Source Voltage, VDS: 12V; (2)Gate-Source Voltage, VGS: ±8V; (3)Continuous Drain Current (TJ = 150℃), TA = 25℃, ID: -9.8 to 7.4A; (4)Continuous Drain Current (TJ = 150℃), TA = 70℃: -7.8 to 5.9A; (5)Pulsed Drain Current, IDM: 30A; (6)Continuous Source Current (Diode Conduction), IS: -1.7 to 0.9A; (7)Maximum Power Dissipation, TA = 25℃, PD: -2.0 to 1.1W; (8)Maximum Power Dissipation, TA = 70℃: -1.3 to 0.7W; (9)Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150℃.

Features

SI4933DY-T1-E3 features: (1)Halogen-free According to IEC 61249-2-21 Definition; (2)TrenchFET Power MOSFET; (3)Compliant to RoHS Directive 2002/95/EC.

Diagrams

SI4933DY-T1-E3 simplified diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
SI4933DY-T1-E3
SI4933DY-T1-E3
Vishay/Siliconix
MOSFET DUAL P-CH 12V (D-S)
Data Sheet
0-1: $1.72
1-10: $1.33
10-50: $1.26
50-100: $1.20
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
Si4900DY
Si4900DY
Other

Data Sheet
Negotiable 
SI4900DY-T1-E3
SI4900DY-T1-E3
Vishay/Siliconix
MOSFET 60V 5.3A 3.1W
Data Sheet
0-1: $0.82
1-50: $0.67
50-100: $0.58
100-500: $0.45
SI4900DY-T1-GE3
SI4900DY-T1-GE3
Vishay/Siliconix
MOSFET 60V 5.3A 3.1W 58mohm @ 10V
Data Sheet
0-1220: $0.44
1220-2500: $0.29
2500-5000: $0.28
5000-7500: $0.27
Si4904DY
Si4904DY
Other

Data Sheet
Negotiable 
SI4904DY-T1-E3
SI4904DY-T1-E3
Vishay/Siliconix
MOSFET 40V 8.0A 3.25W
Data Sheet
0-1: $1.51
1-10: $1.16
10-50: $1.09
50-100: $1.06
SI4904DY-T1-GE3
SI4904DY-T1-GE3
Vishay/Siliconix
MOSFET 40V 8.0A 3.25W 16mohm @ 10V
Data Sheet
0-1: $1.51
1-10: $1.16
10-50: $1.09
50-100: $1.06