(Hong Kong)
Product Summary
The SUD40N10-25 is a N-Channel 100-V (D-S) 175℃ MOSFET.
Parametrics
SUD40N10-25 absolute maximum ratings: (1)Drain-Source Voltage: 100V; (2)Gate-Source Voltage VGS: ±20V; (3)Continuous Drain Current (TJ = 175℃), TC = 25℃, ID: 40A; TC = 125℃: 23A; (4)Pulsed Drain Current IDM: 70 A; (5)Continuous Source Current (Diode Conduction) IS: 40A; (6)Avalanche Current IAR 40A; (7)Repetitive Avalanche Energy (Duty Cycle ≤ 1%) L = 0.1 mH EAR: 80 mJ; (8)Operating Junction and Storage Temperature Range TJ, Tstg: –55 to 175℃.
Features
SUD40N10-25 features: (1)Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 μA 100V; (2)Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 1.0 to 3.0V; (3)Gate-Body Leakage IGSS: ±100 nA; (4)Zero Gate Voltage Drain Current IDSS: 50 μA; VDS = 80 V, VGS = 0 V, TJ = 175℃: 250μA; (5)On-State Drain Current ID(on) VDS = 5 V, VGS = 10 V: 70 A; VGS = 10 V, ID = 40 A: 0.02 to 0.025A; (6)Drain-Source On-State Resistance rDS(on): 0.05Ω; VGS = 10 V, ID = 40 A, TJ = 175℃: 0.063Ω; VGS = 4.5 V, ID = 20 A: 0.022 to 0.028Ω; (7)Forward Transconductance gfs: VDS = 15 V, ID = 40 A: 70 S.
Diagrams
| Image | Part No | Mfg | Description |  |
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 SUD40N10-25 |
Vishay/Siliconix |
MOSFET 100V 40A 33W |
Data Sheet |
Negotiable |
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SUD40N10-25-E3 |
Vishay/Siliconix |
MOSFET 100V 40A 33W |
Data Sheet |
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SUD40N10-25-T4-E3 |
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MOSFET N-CH D-S 100V TO252 |
Data Sheet |
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