(Hong Kong)
Product Summary
Thr SPB12N50C3 is a Cool MOS Power Transistor.
Parametrics
SPB12N50C3 absolute maximum ratings: (1)Continuous drain current, TC = 25℃, ID: 11.6A; (2)Continuous drain current, TC = 100℃ ID: 7A ; (3)Pulsed drain current, tp limited by Tjmax, ID puls: 34.8A ; (4)Avalanche energy, single pulse, ID=2.5A, VDD=50V, EAS: 340mJ ; (5)Avalanche energy, repetitive tAR limited by Tjmax, ID=11.6A, VDD=50V, EAR: 0.6mJ ; (6)Avalanche current, repetitive tAR limited by Tjmax, IAR: 11.6A ; (7)Gate source voltage, VGS: ±20V ; (8)Gate source voltage AC (f >1Hz), VGS: ±30V; (9)Power dissipation, TC = 25℃, Ptot: 33W ; (10)Operating and storage temperature, Tj , Tstg: -55 to +150℃ ; (11)Drain Source voltage slope, VDS = 400 V, ID = 11.6 A, Tj = 125℃, dv/dt: 50V/ns.
Features
SPB12N50C3 features: (1)New revolutionary high voltage technology; (2)Ultra low gate charge; (3)Periodic avalanche rated; (4)Extreme dv/dt rated; (5)Ultra low effective capacitances; (6)Improved transconductance.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 SPB12N50C3 |
Infineon Technologies |
MOSFET COOL MOS N-CH 560V 11.6A |
Data Sheet |
|
|
||||||||||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
 |
SPB1 |
Hammond Manufacturing |
Enclosures, Boxes, & Cases SWING PANEL BRACKET |
Data Sheet |
Negotiable |
|
||||||||||||
|
SPB10015 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
SPB10035 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
 |
SPB10045 |
Microsemi |
DIODE SCHOTTKY 200A 45V SOT227 |
Data Sheet |
|
|
||||||||||||
|
SPB10045E3 |
|
DIODE SCHOTTKY 45V 100A SOT-227 |
Data Sheet |
|
|
||||||||||||
|
SPB100N03S2-03 |
|
MOSFET N-CH 30V 100A D2PAK |
Data Sheet |
Negotiable |
|
||||||||||||
