Product Summary

The BSS123 is a N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers.

Parametrics

BSS123 absolute maximum ratings: (1)VDS drain-source voltage: 100 V; (2)±VGSO gate-source voltage: 20 V; (3)ID drain current DC value: 150 mA; (4)IDM drain current: 600 mA; (5)Ptot total power dissipation up to Tamb = 25 ℃: 250 mW; (6)Tstg storage temperature range: 65 to 150 ℃; (7)Tj junction temperature: 150 ℃.

Features

BSS123 features: (1)Direct interface to C-MOS, TTL, etc.; (2)High-speed switching; (3)No secondary breakdown.

Diagrams

BSS123 PIN CONFIGURATION

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BSS123
BSS123
Fairchild Semiconductor
MOSFET SOT-23 N-CH LOGIC
Data Sheet
0-1: $0.18
1-25: $0.16
25-100: $0.09
100-250: $0.06
BSS123 E6433
BSS123 E6433

MOSFET N-CH 100V 170MA SOT-23
Data Sheet
Negotiable 
BSS123 E7874
BSS123 E7874

MOSFET N-CH 100V 170MA SOT-23
Data Sheet
Negotiable 
BSS123 H6327
BSS123 H6327
Infineon Technologies
MOSFET CHIPLIEFERUNGEN
Data Sheet
Negotiable 
BSS123 L6327
BSS123 L6327
Infineon Technologies
MOSFET N-CH 100V 0.17A
Data Sheet
0-1: $0.21
1-10: $0.15
10-100: $0.09
100-250: $0.06
BSS123 L6433
BSS123 L6433
Infineon Technologies
MOSFET SIPMOS Sm-Signal Transistor 100V .17A
Data Sheet
0-1: $0.19
1-10: $0.14
10-100: $0.10
100-250: $0.08
BSS123 L7874
BSS123 L7874
Infineon Technologies
MOSFET SIPMOS Sm-Signal Transistor 100V .17A
Data Sheet
Negotiable 
BSS123(Z)
BSS123(Z)
Other

Data Sheet
Negotiable